Title
Back diffusion of electrons in N2 subjected to crossed fields
Document Type
Conference Proceeding
Publication Date
10-18-2015
Publication Title
IEEE Xplore
Conference Name
2015 IEEE Conference on Electrical Insulation and Dielectric Phenomena
Abstract
In the E/N range of 50 Td - 700 Td (1 Td = 10 -21 Vm 2 ), the back diffusion process for nitrogen subjected to crossed fields are investigated at B/N values ranging from 0 to 24.24 × 10 -25 Tm 3 by means of a Monte Carlo technique employing realistic collision cross sections. It is observed that at constant electron emission energy of 1.0 eV, for a given E/N the escape factor decreases as B/N increases. It is also observed that in the lower E/N range in crossed fields the escape factor is smaller than those of the higher E/N range. The escape factor on the magnetic deflection angle is evaluated and a dependence on the magnetic field is observed in crossed fields in the given ranges of E/N and B/N.
Rights Statement
This is a RoMEO green publisher - Must link to publisher version
© Copyright 2015 IEEE
Recommended Citation
Dincer, M. S. and Hiziroglu, Huseyin R., "Back diffusion of electrons in N2 subjected to crossed fields" (2015). Electrical & Computer Engineering Presentations And Conference Materials. 31.
https://digitalcommons.kettering.edu/electricalcomp_eng_conference/31
Comments
Ann Arbor, MI, USA