Comparison of SiC MOSFETs and GaN HEMTs Based High-efficiency High-power-density 7.2kW EV Battery Chargers

Document Type

Conference Proceeding

Publication Date


Publication Title

IEEE Xplore

Conference Name

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)


As two exemplary candidates of wide-bandgap devices, SiC MOSFETs and GaN HEMTs are regarded as successors of Si devices in medium-to-high-voltage (>1200V) and low-voltage (<;650V) domains, respectively, thanks to their excellent switching performance and thermal capability. With 650V SiC MOSFETs coming into being the direct competition of SiC and GaN in <;650V domains is inevitable, such as Level-2 battery chargers for electric vehicles. This paper applies 650V SiC and GaN to two 240VAC/7.2kW EV battery chargers, respectively, aiming to provide a head-to-head comparison of these two devices in terms of the efficiency, power density, thermal and cost, with the same control strategy of varying the phase-shift and switching frequency to cover the wide input range (80VAC~260VAC) and wide output range (200V~450VDC).



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