Comparison of SiC MOSFETs and GaN HEMTs Based High-efficiency High-power-density 7.2kW EV Battery Chargers
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
As two exemplary candidates of wide-bandgap devices, SiC MOSFETs and GaN HEMTs are regarded as successors of Si devices in medium-to-high-voltage (>1200V) and low-voltage (<;650V) domains, respectively, thanks to their excellent switching performance and thermal capability. With 650V SiC MOSFETs coming into being the direct competition of SiC and GaN in <;650V domains is inevitable, such as Level-2 battery chargers for electric vehicles. This paper applies 650V SiC and GaN to two 240VAC/7.2kW EV battery chargers, respectively, aiming to provide a head-to-head comparison of these two devices in terms of the efficiency, power density, thermal and cost, with the same control strategy of varying the phase-shift and switching frequency to cover the wide input range (80VAC~260VAC) and wide output range (200V~450VDC).
Copyright © 2017, IEEE
Liu, Guanliang; Bai, Kevin Hua; McAmmond, Matt; Brown, Allan; Johnson, Philip Mike; Taylor, Allan; and Lu, Junchemg, "Comparison of SiC MOSFETs and GaN HEMTs Based High-efficiency High-power-density 7.2kW EV Battery Chargers" (2017). Electrical & Computer Engineering Presentations And Conference Materials. 2.